4th International Conference on Condensed Matter and Materials Physics
Cheongju University, Republic of South Korea
Title: Thin film circuits with amorphous oxide thin film transistor
Biography: Sang Yeol Lee
Amorphous oxide thin film transistors (AOTFT) have been fabricated by RF (Radio Frequency) magnetron sputtering with the bottom gate structure. AOTFTs exhibited to change stability under the bias and temperature stress and electrical properties strongly depending on Si ratio, mainly because Si atom can act as a good carrier suppressor. Therefore, the threshold voltage (Vth) of AOTFTs could be easily controlled by changing the Si ratio. Depletion load inverter model has been consisted by using only n-type AOTFTs. This inverter model is operated by difference of Vth between depletion mode (D-mode) and enhancement mode (E-mode) controlled by Si ratio. Furthermore, the conventional NMOS logic circuit models was adopted for the realization of AOTFT-based logic circuits such as NAND, NOR and ELSE. The proposed logic circuit composed by only n-type AOTFTs could be promising in terms of high performance and simply controllable thin film type for next generation integrated circuit applications.